• EMI shielding (high and low frq.)
• Thick Copper, SuS, Ti, Ni (magnetic materials)
• Dielectrics and Metals
• Barrier/seed layer formation

High Throughput, Low Cost:

3-target co-sputtering enables fewer steps and faster processing

Modular & Scalable:

Octagonal architecture w/ flexible chamber and load port configurations

Low Temp, High Performance:

<80°C processing with superior films for advanced packaging

Automation-Ready :

Seamless integration with OHT and factory automation for manufacturing

Flexible & Future Proof:

Supports CVD integration and adapts to evolving substrate needs

Delivering high throughput, low cost, and exceptional process performance

Key Applications

• §Thick Copper, SuS, Ti, Ni (magnetic materials)
• §Barrier/seed layer formation
• §EMI shielding
• §High-rate, low-temp

Best in class performance

• §Low contact resistance
• §Best step coverage
• §High Throughput >75wph
• §Larger targets with high ionization for best CoO
• §Target utilization > 40% (TGV)
• §Pre-clean uniformity <±3%
• §Optimized footprint à 1/4^th competitor footprint
• §Spacing between package <1mm

Goal is to deliver 2-3X productivity, 2X cost of ownership advantage to customers